FDN327N
N-Channel 1.8 Vgs Specified PowerTrench® MOSFET
General Description
Features
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
• 2 A, 20 V.
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 80 mΩ @ VGS = 2.5 V
RDS(ON) = 120 mΩ @ VGS = 1.8 V
Applications
• Low gate charge (4.5 nC typical)
•
Load switch
•
Battery protection
• Fast switching speed
•
Power management
• High performance trench technology for extremely
low RDS(ON)
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
(Note 1a)
2
A
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
(Note 1b)
0.46
– Continuous
– Pulsed
TJ, TSTG
8
W
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
327
FDN327N
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDN327N Rev C (W)
FDN327N
October 2001
FDN327N
Typical Characteristics
2
16
VGS = 4.5V
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
3.0V
2.0V
12
1.8V
8
4
0
VGS = 1.8V
1.8
1.6
2.0V
1.4
2.5V
1.2
3.0V
3.5V
0.8
0
0.5
1
1.5
2
2.5
3
3.5
0
4
8
VDS, DRAIN-SOURCE VOLTAGE (V)
16
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
1.6
ID = 2A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 1A
0.14
0.1
TA = 125 oC
0.06
o
TA = 25 C
0.02
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
12
o
TA =-55 C
VGS = 0V
o
25 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
I D, DRAIN CURRENT (A)
4.5V
1
125oC
9
6
3
10
TA = 125oC
1
25oC
0.1
o
-55 C
0.01
0.001
0
0.0001
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN327N Rev C (W)
