FDN336P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
•
–1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V
•
Low gate charge (3.6 nC typical)
RDS(ON) = 0.27 Ω @ VGS = –2.5 V
•
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
High performance trench technology for extremely
low RDS(ON)
•
TM
SuperSOT
-3 provides low RDS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
VDSS
TA=25oC unless otherwise noted
Parameter
Ratings
Units
–20
Drain-Source Voltage
V
Drain Current
PD
±8
(Note 1a)
Maximum Power Dissipation
V
A
0.5
W
0.46
Gate-Source Voltage
ID
–1.3
–10
(Note 1b)
VGSS
– Continuous
(Note 1a)
– Pulsed
TJ, TSTG
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
336
FDN336P
7’’
8mm
3000 units
©2005 Fairchild Semiconductor Corporation
FDN306P Rev D
FDN336P
January 2005
Typical Electrical Characteristics
2
8
R DS(on), NORMALIZED
VGS = -4.5V
-3.5V
-3.0V
6
-2.5V
4
-2.0V
2
DRAIN-SOURCE ON-RESISTANCE
- ID , DRAIN-SOURCE CURRENT (A)
10
0
0
1
2
3
4
1.8
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
5
VGS = -2.5 V
1.6
0
2
-VDS , DRAIN-SOURCE VOLTAGE (V)
4
6
8
10
- I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate
0.5
I D = -1.3A
1.4
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
VGS = -4.5V
1.2
1
0.8
ID = -0.6A
0.4
0.3
0.2
TA= 125°C
0.1
25°C
0
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
0
2
150
6
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = -5V
TJ = -55°C
3
- IS , REVERSE DRAIN CURRENT (A)
4
- I D , DRAIN CURRENT (A)
4
- V GS , GATE TO SOURCE VOLTAGE (V)
25°C
125°C
2
1
0
0.5
1
1.5
2
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
VGS = 0V
TJ = 125°C
1
25°C
-55°C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source
Current
and Temperature.
FDN336P Rev.D
