FDN342P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
-2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V
RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
Rugged gate rating (±12V).
High performance trench technology for extremely
low RDS(ON).
Applications
Load switch
Battery protection
Power management
Enhanced power SuperSOTTM-3 (SOT-23).
D
D
S
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
S
G
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
±12
-2
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
(Note 1b)
TJ, Tstg
A
-10
0.46
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDN342P
FDN342P
7’’
8mm
3000 units
1999 Fairchild Semiconductor Corporation
FDN342P Rev. B
FDN342P
August 1999
FDN342P
Typical Characteristics
2
VGS = -4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN-SOURCE CURRENT (A)
20
-4.0V
-3.5V
15
-3.0V
10
-2.5V
5
-2.0V
1.8
VGS = -2.5V
1.6
-3.0V
1.4
-3.5V
1.2
-4.0V
-4.5V
1
0
0
1
2
3
4
0.8
5
0
-VDS, DRAIN-SOURCE VOLTAGE (V)
4
8
12
16
20
- ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.3
ID = -2.0A
VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
ID = -1A
0.2
TA = 125oC
0.1
TA = 25oC
0
0.6
-50
-25
0
25
50
75
100
125
1
150
2
Figure 3. On-Resistance Variation
with Temperature.
4
5
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
8
-IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = -5V
o
-ID, DRAIN CURRENT (A)
3
-VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
125 C
6
4
2
VGS = 0V
10
TA = 125oC
25oC
1
-55oC
0.1
0.01
0.001
0.0001
0
0.4
1.4
2.4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN342P Rev. B
