April 1999
FDN359AN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
SuperSOTTM -8
SuperSOTTM -6
SOT-23
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V
RDS(ON) = 0.060 Ω @ VGS = 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SO-8
SOIC-16
SOT-223
D
D
9A
35
S
TM
SuperSOT -3
G
Absolute Maximum Ratings
TA = 25oC unless other wise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Maximum Drain Current - Continuous
Ratings
V
2.7
A
15
(Note 1a)
0.5
(Note 1b)
TJ,TSTG
Maximum Power Dissipation
V
±20
(Note 1a)
Units
30
- Pulsed
PD
S
G
0.46
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
© 1999 Fairchild Semiconductor Corporation
FDN359AN Rev.C
Typical Electrical Characteristics
4.5V
3.5V
6.0V
10
R DS(ON) , NORMALIZED
I D , DRAIN-SOURCE CURRENT (A)
VGS = 10V
8
3.0V
6
4
2
2.5V
DRAIN-SOURCE ON-RESISTANCE
3
12
2.5
VGS = 3.0V
2
3.5V
4.0V
1.5
4.5V
6.0V
10V
1
0.5
0
0
0.5
1
1.5
2
0
2.5
2
4
12
I D = 1.3A
I D = 2.7 A
R DS(ON) , ON-RESISTANCE (OHM)
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
0.15
1.6
VGS = 10 V
1.2
1
0.8
0.6
-50
0.12
0.09
TA = 125°C
0.06
TA = 25°C
0.03
0
-25
0
25
50
75
100
125
0
150
2
TJ , JUNCTION TEMPERATURE (°C)
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
I S , REVERSE DRAIN CURRENT (A)
12
VDS = 5V
I D , DRAIN CURRENT (A)
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.4
6
I D , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
9
6
3
T = -55°C
A
25°C
125°C
V GS = 0V
1
TA= 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
1
2
V
GS
3
4
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN359AN Rev.C
