FDS3601
100V Dual N-Channel PowerTrench MOSFET
General Description
Features
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V
RDS(ON) = 530 mΩ @ VGS = 6 V
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
• Low gate charge (3.7nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D1
D1
5
D2
6
D2
4
3
Q1
7
SO-8
S2
G2
S1
G1
Absolute Maximum Ratings
Symbol
8
2
Q2
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
1.3
A
– Continuous
(Note 1a)
– Pulsed
PD
6
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
W
1.6
0.9
–55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3601
FDS3601
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS3601 Rev C(W)
FDS3601
August 2001
FDS3601
Typical Characteristics
4
1.6
5.0V
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS =10V
4.5V
3
4.0V
2
1
0
VGS = 4.0V
1.4
4.5V
1.2
5.0V
10V
1
0.8
0
2
4
6
0
8
1
Figure 1. On-Region Characteristics.
3
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.25
2.6
ID = 1.3A
VGS = 10V
2.2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.8
1.4
1
0.6
0.2
ID = 0.6A
1
TA = 125oC
0.75
0.5
TA = 25oC
0.25
-50
-25
0
25
50
75
100
125
150
175
2.5
4
o
TJ, JUNCTION TEMPERATURE ( C)
5.5
7
8.5
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
IS, REVERSE DRAIN CURRENT (A)
6
VDS = 5V
ID, DRAIN CURRENT (A)
6.0V
4.5
3
TA = 125oC
25oC
1.5
-55oC
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3601 Rev C(W)
