FDS3672
N-Channel PowerTrench® MOSFET
100V, 7.5A, 22mΩ
Features
Applications
• r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A
• DC/DC converters and Off-Line UPS
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Distributed Power Architectures and VRMs
• Low Miller Charge
• Primary Switch for 24V and 48V Systems
• Low QRR Body Diode
• High Voltage Synchronous Rectifier
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82763
Branding Dash
5
6
2
3
4
2
8
1
3
7
5
4
1
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
100
Units
V
VGS
Gate to Source Voltage
±20
V
Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W)
7.5
A
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
4.8
A
Drain Current
ID
Pulsed
TJ, TSTG
416
mJ
2.5
W
Derate above 25oC
PD
A
Single Pulse Avalanche Energy (Note 1)
Power dissipation
EAS
Figure 4
20
mW/oC
Operating and Storage Temperature
o
-55 to 150
C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
50
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
85
o
25
oC/W
RθJC
Thermal Resistance, Junction to Case (Note 2)
C/W
Package Marking and Ordering Information
Device Marking
FDS3672
©2012 Fairchild Semiconductor Corporation
Device
FDS3672
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
FDS3672 Rev. C2
FDS3672
April 2012
FDS3672
Typical Characteristics TA = 25°C unless otherwise noted
8
1.2
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
VGS = 10V
1.0
0.8
0.6
0.4
6
4
2
0.2
0
0
0
25
50
75
100
125
150
25
50
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
100
125
0.1
150
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
75
TC, CASE TEMPERATURE (o C)
TA , AMBIENT TEMPERATURE (oC)
RθJA=50oC/W
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-5
10 -4
10-3
10-2
10-1
100
t , RECTANGULAR PULSE DURATION (s)
101
102
103
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I = I 25
VGS = 10V
150 - TC
125
100
10
5
10-5
10 -4
10-3
10-2
10-1
t , PULSE WIDTH (s)
100
101
102
103
Figure 4. Peak Current Capability
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
