FDS3890
80V N-Channel Dual PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
4.7 A, 80 V.
RDS(ON) = 44 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 6 V
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D1
D1
5
D2
6
D2
4
3
Q1
7
SO-8
S2
G2
S1
G1
Absolute Maximum Ratings
Symbol
8
2
Q2
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
80
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
4.7
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
20
2
Power Dissipation for Single Operation
1.0
(Note 1c)
W
1.6
(Note 1b)
TJ, TSTG
(Note 1a)
0.9
–55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3890
FDS3890
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS3890 Rev B(W)
FDS3890
February 2001
FDS3890
Typical Characteristics
2
ID, DRAIN CURRENT (A)
VGS = 10V
5.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
4.0V
16
12
8
3.5V
4
1.8
1.6
VGS = 4.0V
1.4
4.5V
5.0V
1.2
6.0V
10V
1
0.8
0
0
1
2
3
0
4
4
8
Figure 1. On-Region Characteristics.
16
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
2.2
ID = 4.7A
VGS = 10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1
0.6
0.2
-50
-25
0
25
50
75
100
125
150
ID = 2.4 A
0.075
TA = 125oC
0.05
TA = 25oC
0.025
0
175
2
4
6
8
10
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
IS, REVERSE DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
VDS = 5V
16
25oC
12
8
TA = 125oC
4
-55oC
2
3
TA = 125oC
25oC
1
-55oC
0.1
0.01
0.001
0
1
VGS = 0V
10
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3890 Rev B(W)
