FDS3912
100V Dual N-Channel PowerTrench® MOSFET
General Description
Features
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 3 A, 100 V.
RDS(ON) = 125 mΩ @ VGS = 10 V
RDS(ON) = 135 mΩ @ VGS = 6 V
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
• Low gate charge (14 nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
5
6
4
3
Q1
7
8
Absolute Maximum Ratings
Symbol
VDSS
2
Q2
1
o
TA=25 C unless otherwise noted
Parameter
Ratings
VGSS
Drain Current
PD
V
±20
Gate-Source Voltage
ID
Units
100
Drain-Source Voltage
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
V
3
A
20
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
W
1.6
0.9
–55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3912
FDS3912
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS3912 Rev C2(W)
FDS3912
October 2001
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 1.3 A
IF = 3A
diF/dt = 100 A/µs
1.3
A
1.2
V
(Note 2)
0.76
30
nS
(Note 2)
106
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
2
0.5in pad of 2
oz copper
b)
125°C/W when
mounted on a
2
0.02 in pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS3912 Rev C2(W)
FDS3912
Drain–Source Diode Characteristics and Maximum Ratings
