FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 24A
•
•
•
•
•
•
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• Low Conduction Loss
IGBT (co-pack) formerly Developmental Type TA49438
Package
Symbol
TO-247
E
C
G
TO-220AB
C
E
C
TO-263AB
G
G
G
E
COLLECTOR
(Back-Metal)
COLLECTOR
(Flange)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
75
A
IC110
Collector Current Continuous, TC = 110°C
35
A
ICM
VGES
Collector Current Pulsed (Note 1)
180
A
Gate to Emitter Voltage Continuous
±20
V
±30
V
VGEM
Gate to Emitter Voltage Pulsed
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
100A at 600V
EAS
Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V
260
PD
Power Dissipation Total TC = 25°C
290
W
Power Dissipation Derating TC > 25°C
2.33
W/°C
TJ
TSTG
mJ
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
August 2003
TJ = 25°C unless otherwise noted
90
ICE, COLLECTOR TO EMITTER CURRENT (A)
125
PACKAGE LIMITED
70
60
50
40
30
20
10
0
TJ = 150oC, RG = 3Ω VGE = 15V, L = 100µH
,
100
75
50
25
0
25
50
75
100
125
150
0
100
TC , CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
400
500
700
600
13
TC = 75oC
VGE = 15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.27oC/W, SEE NOTES
10
VGE = 10V
TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V
500
VCE = 390V, RG = 3Ω TJ = 125oC
,
11
450
9
400
ISC
7
350
5
300
tSC
3
1
10
1
30
250
9
60
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
11
13
12
14
16
15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
40
DUTY CYCLE < 0.5%, VGE =10V
PULSE DURATION = 250µs
30
25
20
15
TJ = 25oC
10
TJ = 150oC
5
TJ = 125oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
300
Figure 2. Minimum Switching Safe Operating Area
1000
35
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
80
DUTY CYCLE < 0.5%, VGE =15V
35
PULSE DURATION = 250µs
30
25
20
15
TJ = 25oC
10
TJ = 150oC
5
TJ = 125oC
0
0
0.0 0.2
0.4
0.6
0.8
1.0
1.2
1.4 1.6
1.8
2.0
2.2
2.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
0.0 0.2
0.4
0.6
0.8
1.0 1.2
1.4 1.6
1.8
2.0
2.2
2.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
