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SUP70N03-09BP
SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 30 ID (A) 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 100_C Pulsed Drain Current Repetitive Avalanche ID 50 IDM Energya 200 IAR Avalanche Current V 70b TC = 25_C Continuous Drain Current (TJ = 175_C) _ Unit A 30 L = 0.1 mH EAR 61 mJ TC = 25_C PD 93b W TJ, Tstg –55 to 175 _C Symbol Power Dissipation Limit Unit Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W 1.6 Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71229 S-20102—Rev. B, 11-Mar-02 www.vishay.com 1
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