4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
ADE-208-1209 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A
P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
