SF8GZ47, SF8JZ47
TOSHIBA Thyristor
Silicon Planar Type
SF8GZ47, SF8JZ47
Medium-power control applications
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Unit: mm
: VDRM = 400 V, 600 V
: VRRM = 400 V, 600 V
Average on-state current
: IT (AV) = 8 A
Isolation voltage
: VIsol = 1500 V AC
Maximum Ratings
Characteristic
Symbol
Repetitive peak
off−state volage
and repetitive peak6
reverse voltage
SF8GZ47
Non−repetitive peak
reverse voltage
(non−repetitive < 5 ms,
Tj = 0~125°C)
Rating
SF8GZ47
SF8JZ47
400
VDRM
VRRM
V
600
500
V
VRSM
720
SF8JZ47
Average on-state current (half-sine
waveform Tc = 72°C)
rms on-state current
Peak one-cycle surge on-state current
(non−repetitive)
2
I t limit value
Unit
8
IT (RMS)
ITSM
A
JEDEC
―
12.6
IT (AV)
A
JEITA
―
A
TOSHIBA
120 (50 Hz)
132 (60 Hz)
2
2
I t
72
di/dt
100
A/μs
Peak gate power dissipation
PGM
5
W
PG (AV)
0.5
W
Peak forward gate voltage
VFGM
10
V
Peak reverse gate voltage
VRGM
−5
V
Peak forward gate current
IGM
2
A
Tj
−40~125
°C
Tstg
−40~125
°C
VISOL
1500
Weight: 2.0 g (typ.)
A s
Critical rate of rise of on-state current
(Note 1)
13−10H1B
V
Average gate power dissipation
Junction temperature
Storage temperature range
Isolation voltage (AC, t = 1 min.)
Note 1: di/dt test condition,
VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 μs,
tgr ≤ 250 ns, igp = IGT × 2.0
1
2005-05-18