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IRF8734TRPBF
PD - 96226 IRF8734PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS RDS(on) max Qg (typ.) 30V 3.5m @VGS = 10V 20nC : A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Parameter VDS Drain-to-Source Voltage VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 17 Pulsed Drain Current Units 30 168 IDM PD @TA = 25°C PD @TA = 70°C f Power Dissipation f V 21 c A 2.5 Power Dissipation W 1.6 Linear Derating Factor 0.02 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range W/°C °C Thermal Resistance Parameter RθJL Junction-to-Drain Lead RθJA Junction-to-Ambient f g Typ. Max. ––– 20 ––– 50 Units °C/W Notes through are on page 10 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 2/12/09
IR
International Rectifier
U.S.A
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