HOME＞在庫検索＞在庫情報
MG100Q2YS51
MG100Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 Unit: mm High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC (25°C / 80°C) 150 / 100 1ms ICP (25°C / 80°C) 300 / 200 DC IF 100 1ms IFM 200 PC 660 W Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature A A Tj 150 °C Storage temperature range Tstg −40 ~ 125 °C Isolation voltage VIsol 2500 (AC 1 min.) V ― 3/3 N·m Screw torque (Terminal / mounting) 1 2001-04-16
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
見積依頼→在庫確認→見積回答→注文→検収→支払 となります。
