This product complies with the RoHS Directive (EU 2002/95/EC).
KPID150HC
Si High Speed & High Responsivity
Photodiode
Features
Anode pad
・Large active area
・High speed response
・High responsibility
・High reliability
Active Area
(Φ1.5)
Shield metal
Applications
・Optical fiber communication
・High speed optical measurement
Back side
cathode
Dimension :1.84×1.84×0.24t
(unit: mm)
Specifications
Absolute Maximum Ratings (Ta=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
20
V
Reverse current
IR
10
mA
Forward current
IF
10
mA
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Electrical and Optical characteristics (Ta=25°C unless otherwise noted)
Parameter
Active diameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
D
1.5
mm
BW
0.2
GHz
RL=50ohm, VR=10V
Responsivity
R
0.58
A/W
VR=10V, λ= 850nm
Dark current
ID
0.8
2.6
nA
VR=10V
Total capacitance
C
8
12
pF
VR=10V, f=1MHz
Sensitive
Wavelength
λ
400-1000
Bandwidth
nm
Specifications are subject to change without notice.
(2007/Nov /KPID150HC)
Kyosemi Corporation
Copyright © 2007 Kyosemi Corporation, all rights reserved
