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KPID150HC
This product complies with the RoHS Directive (EU 2002/95/EC). KPID150HC Si High Speed & High Responsivity Photodiode Features Anode pad ・Large active area ・High speed response ・High responsibility ・High reliability Active Area (Φ1.5) Shield metal Applications ・Optical fiber communication ・High speed optical measurement Back side cathode Dimension :1.84×1.84×0.24t (unit: mm) Specifications Absolute Maximum Ratings (Ta=25°C unless otherwise noted) Parameter Symbol Value Unit Reverse voltage VR 20 V Reverse current IR 10 mA Forward current IF 10 mA Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +125 °C Electrical and Optical characteristics (Ta=25°C unless otherwise noted) Parameter Active diameter Symbol Min. Typ. Max. Unit Conditions D 1.5 mm BW 0.2 GHz RL=50ohm, VR=10V Responsivity R 0.58 A/W VR=10V, λ= 850nm Dark current ID 0.8 2.6 nA VR=10V Total capacitance C 8 12 pF VR=10V, f=1MHz Sensitive Wavelength λ 400-1000 Bandwidth nm Specifications are subject to change without notice. (2007/Nov /KPID150HC) Kyosemi Corporation Copyright © 2007 Kyosemi Corporation, all rights reserved
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