This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
Unit: mm
4.5±0.1
1.5±0.1
0.4±0.04
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0.5±0.08
3˚
1
0.4±0.08
1.0+0.1
–0.2
• Large collector power dissipation PC
• High collector-emitter voltage (Base open) VCEO
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
4.0+0.25
–0.20
■ Features
2.5±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
1.6±0.2
1.5±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5
V
0.5
A
1
A
45˚
3.0±0.15
Unit
Collector-base voltage (Emitter open)
0.4 max.
2.6±0.1
3˚
Collector current
IC
Peak collector current
ICP
Collector power dissipation
*
PC
Junction temperature
Tj
Storage temperature
Tstg
1
°C
−55 to +150
Marking Symbol: X
W
150
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
°C
cm2
ue
or more, and the
Note) *: Printed circuit board: Copper foil area of 1
board thickness of 1.7 mm for the collector portion
Parameter
ce
/D
isc
on
tin
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Min
Typ
Max
Unit
VCBO
IC = 10 µA, IE = 0
80
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 µA, IB = 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
hFE1 *
VCE = 10 V, IC = 150 mA
130
hFE2
VCE = 50 V, IC = 500 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
0.85
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
120
VCB = 10 V, IE = 0, f = 1 MHz
11
int
en
an
Collector-base voltage (Emitter open)
Ma
Forward current transfer ratio
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
V
0.1
µA
330
100
MHz
20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 220
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00198CED
1
