3LN01C
Ordering number : EN6260A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
3LN01C
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
Gate-to-Source Voltage
VGSS
±10
V
ID
150
mA
600
mA
Drain Current (DC)
PW≤10µs, duty cycle≤1%
V
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
0.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Ratings
min
typ
Unit
max
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
RDS(on)1
RDS(on)2
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
2.9
3.7
Ω
Static Drain-to-Source On-State Resistance
3.7
5.2
Ω
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
6.4
12.8
Input Capacitance
RDS(on)3
Ciss
7.0
VDS=10V, f=1MHz
VDS=10V, f=1MHz
5.9
pF
2.3
pF
Cutoff Voltage
V(BR)DSS
Conditions
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Marking : YA
30
V
1
±10
0.4
0.15
µA
µA
1.3
0.22
V
S
Ω
pF
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Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 33006PE MS IM TB-00002198 / 21400 TS (KOTO) TA-1987 No.6260-1/4
