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HN4B101JTE85L,F
HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 +0.2 1.6 -0.1 High-speed switching : PNP 2 tf = 45 ns (typ.) 3 +0.2 1.1 -0.1 : NPN tf = 50 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol 1. Base (PNP) Unit PNP 2. Emitter (PNP/NPN) NPN 3. Base (NPN) Collector-base voltage VCBO −30 50 Collector-emitter voltage VCEO −30 30 V Emitter-base voltage VEBO −7 7 V (Note 1) IC −1.0 1.2 Pulse (Note 1) ICP −5.0 5.0 IB −120 120 4. Collector (NPN) V Collector current DC Base current 4 +0.1 0.16 -0.06 • VCE (sat) = 0.17 V (max) 0~0.1 : NPN 0.4±0.1 Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) 0.95 • 5 1 0.95 High DC current gain : hFE = 200 to 500 (IC = −0.12 A) 1.9±0.2 Small footprint due to a small and thin package • 2.9±0.2 • 5. Collector (PNP) mA Collector power dissipation (t = 10 s) Single-device operation PC (Note 2) 0.85 Single-device operation PC (Note 2) 0.55 150 −55 to 150 2-3L1A Weight: 0.014g (typ.) °C Tstg TOSHIBA W Tj ― W Collector power dissipation (DC) ― JEITA A JEDEC °C Junction temperature Storage temperature range Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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