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MMBTA92LT1GROHS
SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBT92 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type SMBTA92/MMBTA92 Marking s2D Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 500 Base current IB 100 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS V mA TS ≤ 74 °C -65 ... 150 Value ≤ 210 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA92/MMBTA92 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range I C = ƒ(VCEO) TA = 25°C, D = 0 SMBTA 92/93 10 3 EHP00883 SMBTA 92/93 EHP00880 mA 5 ΙC h FE 10 2 10 10 µs 5 2 10 1 100 µs 1 ms 5 100 ms 5 2 10 1 DC 10 5 500 ms 0 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 10 -1 10 0 3 5 10 1 5 10 2 ΙC Collector cutoff current ICBO = ƒ(TA) VCBO = 200 V VCE = 10V SMBTA 92/93 EHP00882 10 4 mA Ι CB0 ΙC SMBTA 92/93 EHP00881 nA max 10 3 10 10 3 V CEO Collector current I C = ƒ(VBE) 10 3 V 5 2 5 10 2 10 1 5 10 1 typ 10 0 10 0 5 10 -1 10 -1 0 0.5 V 1.0 1.5 0 50 100 C 150 TA V BE 3 2007-04-19
ONS
ON Semiconductor
U.S.A
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