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2SK2731T146TAPINGREEL
Interface and switching (30V, 200mA) 2SK2731 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). (3) (2) Application Switching ROHM : SMT3 E I A J : SC-59 Packaging specifications (1) Source (2) Gate (3) Drain Abbreviated symbol : KL Inner circuit Package Type (1) Drain Taping Code T146 Basic ordering unit (pieces) 3000 2SK2731 Gate ∗ Gate Protection Diode Source ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Absolute maximum ratings (Ta=25C) Symbol Limits Unit Drain-source voltage Parameter VDSS 30 V Gate-source voltage Drain current VGSS ±20 V Continuous ID 200 mA Pulsed IDP∗ 800 mA PD 200 mW Total power dissipation Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗ Pw≤10μs, Duty cycle≤1% www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.06 - Rev.A
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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