5 mW, 650 nm AlGaInP MQW
NDL3321ST
VISIBLE LASER DIODE
NDL3321SU
FOR DVD, DVD-ROM APPLICATIONS
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT:
ITH = 45 mA TYP
• LOW OPERATING CURRENT:
IOP = 60 mA TYP
• LOW OPERATING VOLTAGE:
VOP = 2.2 V TYP
• WIDE OPERATING TEMPERATURE RANGE:
TC = -10 to +70 ˚C
• PEAK EMISSION WAVELENGTH:
λp = 650 nm TYP
• FUNDAMENTAL TRANSVERSE MODE
X
0.4±0.1
110˚±1.5˚
1.0±0.15
Y
0.4±0.1
Kovar Glass
2.3±0.3
LD Chip
0.25
0.75 MAX
1.27
1.2±0.1
6.5±0.5
APPLICATIONS
Chip Location
| X|, | Y| ≤ 0.1
| Z| ≤ 0.1
| θII |, | θ | ≤ 3˚
+0
φ5.6 -0.025
φ4.4
φ3.55
φ1.0
z
3—φ0.45
NDL3321ST
NDL3321SU
3 (Case)
3 (Case)
φ2.0±0.2
1
• DVD, DVD-ROM
• MEASURMENT INSTRUMENTS
PD
3
2
LD
1
PD
2
LD
1
2
Pin Connections
1. PD Cathode
1. PD Anode
2. LD Anode
2. LD Anode
3. Case Ground
3. Case Ground
DESCRIPTION
The NDL3321ST and NDL3321SU are AlGaInP 650 nm visible laser diodes specially developed for DVD and DVD-ROM.
The newly developed Multiple Quantum Well (MQW) LD chip
can achieve low operating current over a wide temperature
range.
Use of a CD package allows easy replacement of conventional 780 nm LDs.
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25˚C)
PART NUMBER
SYMBOLS
NDL3321ST, NDL3321SU
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
V
2.2
2.7
mA
45
65
VOP
Operating Voltage, PO = 5.0 mW
ITH
Threshold Current, CW
IOP
Operating Current, PO = 5.0 mW
mA
60
80
IM
Monitor Current, VR = 5 V, PO = 5.0 mW
mA
0.1
0.3
0.5
λp
Peak Emission Wavelength, PO = 5.0 mW
657
nm
645
650
θ
Vertical Beam Angle, PO = 5.0 mW,
FAHM1
deg.
25
30
35
θII
Lateral Beam Angle, PO = 5.0 mW, FAHM1
deg.
6
8
10
Note:
1. FAHM: Full Angle at Half Maximum.
California Eastern Laboratories
