RN1501∼RN1506
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1501, RN1502, RN1503
RN1504, RN1505, RN1506
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SMV
(super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2501 to RN2506
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1501
4.7
4.7
RN1502
10
10
RN1503
22
22
RN1504
47
47
RN1505
2.2
47
RN1506
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 6.8mg (typ.)
Equivalent Circuit (Top View)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN1501 to 1506
RN1501 to 1504
RN1505, 1506
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Rating
Unit
VCBO
50
V
VCEO
50
V
10
VEBO
5
V
IC
RN1501 to 1506
100
mA
PC *
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Start of commercial production
1988-10
1
2014-03-01
