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2SK2009TE85L
2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Unit: mm Excellent switching times: ton = 0.06 μs (typ.) toff = 0.12 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) • Small package. • Enhancement-mode Marking Equivalent Circuit JEDEC TO-236MOD JEITA Characteristics Symbol Rating Unit Drain-source voltage VDS 30 VGSS ±20 V DC drain current ID 200 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 2-3F1F V Gate-source voltage SC-59 TOSHIBA Absolute Maximum Ratings (Ta = 25°C) °C Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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