DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N075CUE,NP84N075DUE,NP84N075EUE,NP84N075KUE
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
PART NUMBER
PACKAGE
Transistor designed for high current switching
NP84N075CUE
TO-220AB
applications.
NP84N075DUE
TO-262
NP84N075EUE
TO-263 (MP-25ZJ)
NP84N075KUE
TO-263 (MP-25ZK)
These products are N-channel MOS Field Effect
FEATURES
5
• Channel temperature 175 degree rated
(TO-220AB)
• Super low on-state resistance
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss : Ciss = 5600 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±84
A
Drain Current (DC) (TC = 25°C)
Note1
ID(pulse)
±260
A
Total Power Dissipation (TA = 25°C)
PT1
1.8
W
Total Power Dissipation (TC = 25°C)
PT2
200
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to +175
°C
Single Avalanche Current Note3
IAS
19 / 52 / 73
A
EAS
333 / 250 / 50
mJ
(TO-262)
Drain Current (pulse) Note2
Single Avalanche Energy
Note3
(TO-263)
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW ≤ 10 µs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω , VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.75
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14675EJ3V0DS00 (3rd edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002
