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FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is in a rugged
gate version ®of Fairchild Semiconductor's advanced
®
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
–11 A, –20 V. RDS(ON) = 0.014
@ VGS = –4.5 V
RDS(ON) = 0.020
@ VGS = –2.5 V
•
•
Low gate charge (43nC typical).
•
Fast switching speed.
•
Applications
• Load switch
• Battery protection
• Power management
Extended VGSS range ( 12V) for battery applications.
High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
• RoHS Compliant.
D
5
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
3
7
2
8
G
4
6
D
MOSFET
D
D
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
12
V
ID
Drain Current
–11
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
PD
1.2
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.0
–55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6576
FDS6576
13’’
12mm
2500 units
2006 Fairchild Semiconductor Corporation
FDS6576 P-Channel 2.5V Specified PowerTrench
December 2006
FDS6576 Rev E3