Power PhotoMOS (AQZ404)
High capacity
PhotoMOS Relay.
(Load current Max. 0.5A)
1 Form B.
Power PhotoMOS
(AQZ404)
FEATURES
3.5
.138
1. High capacity
A maximum 0.5A load can be controlled
with a 5 mA input current. The ON
resistance is low at 2.8Ω (typ.)
2. 1 Form B
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Doublediffused and Selective Doping) method.
21
.827
12.5
.492
3. Compact slim-type 4-pin SIL
(W)3.5× (D)21.0× (H)12.5 mm
(W).138×(D).827×(H).492 inch×
The compact size of the 4-pin SIL
package allows high density mounting.
;;
;;
mm inch
Cross section of the normally-closed type of
power MOS
;
;;;
;;
Passivation membrane
Intermediate
Source electrode Gate electrode
insulating
membrane
1
–
2
+
3
4
N+
P+
N+
N+
P+
N+
Gate
oxidation
membrane
N–
Drain
electrode
RoHS Directive compatibility information
http://www.mew.co.jp/ac/e/environment/
TYPES
N+
TYPICAL APPLICATIONS
• Railroad, traffic signals
• Measurement instruments
• Testing equipment
AC/DC type
Output rating*
Load voltage
400 V
Part No.
Load current
0.5 A
AQZ404
Packing quantity
Inner carton
25 pcs
Outer carton
500 pcs
RATING
1) Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item
LED forward current
LED reverse voltage
Input
Peak forward current
Power dissipation
Load voltage (Peak AC)
Continuous load current (Peak AC)
Output
Peak load current
Power dissipation
Total power dissipation
I/O isolation voltage
Operating
Temperature limits
Storage
Symbol
IF
VR
IFP
Pin
VL
IL
Ipeak
Pout
PT
Viso
Topr
Tstg
AQZ404
50 mA
5V
1A
75 mW
400 V
0.5 A
1.5 A
1.6 W
1.6 W
2,500 V AC
–40°C to +85°C –40°F to +185°F
–40°C to +100°C –40°F to +212°F
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
Remarks
f = 100 Hz, Duty factor = 0.1%
100 ms (1 shot), VL = DC
Non-condensing at low temperatures
