Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
•
•
•
•
•
•
•
•
•
•
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (128 Bytes/sector)
– Internal Address and Data Latches for 128 Bytes
Two 8K Bytes Boot Blocks with Lockout
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time – 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
1-megabit
(128K x 8)
5-volt Only
Flash Memory
AT29C010A
Description
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is
Pin Configurations
Function
Addresses
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
A12
A15
A16
NC
VCC
WE
NC
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
4
3
2
1
32
31
30
CE
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
A0 - A16
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
Pin Name
DIP Top View
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0394F–FLASH–02/03
1
