This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA6X1280G
Silicon epitaxial planar type
For switching circuits
■ Package
• Four isolated elements contained in one package, allowing highdensity mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
• The mirror image wiring of MA6X123
• Short reverse recovery time trr
• Small terminal capacitance Ct
• High breakdown voltage: VR = 80 V
• Code
Mini6-G3
• Pin Name
M
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■ Features
4: Cathode 1, 2
5: Anode 3
6: Anode 4
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1: Cathode 3, 4
2: Anode 1
3: Anode 2
■ Marking Symbol: M2V
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Rating
80
Forward current *1
Non-repetitive peak forward
surge current *1, 2
IFSM
mA
500
IFM
mA
225
IF
Peak forward current *1
V
100
VRM
V
80
VR
Maximum peak reverse voltage
mA
150
Junction temperature
Tstg
Note) *1: Value for single diode
*2: t = 1 s
(C1, C2) (A3)
4
5
°C
(A4)
6
°C
−55 to +150
Tj
Storage temperature
■ Internal Connection
Unit
3
(A2)
2
1
(A1) (C3, C4)
ce
/D
isc
on
tin
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Forward voltage
VF
VR
Reverse current
en
Terminal capacitance
an
Reverse voltage
Ma
int
Reverse recovery time *
IR
Ct
trr
Conditions
Min
Typ
Max
Unit
1.2
V
100
nA
VR = 0 V, f = 1 MHz
2
pF
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
3
ns
IF = 100 mA
IR = 100 µA
80
V
VR = 75 V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: March 2009
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00118AED
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
