FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00042-0v01-E
Memory FRAM
64 K (8 K × 8) Bit I2C
MB85RC64T
■ DESCRIPTION
The MB85RC64T is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC64T is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC64T has improved to be at
least 1013 cycles, significantly outperforming Flash memory and E2PROM in the number.
The MB85RC64T does not need a polling sequence after writing to the memory such as the case of Flash
memory or E2PROM.
■ FEATURES
: 8,192 words × 8 bits
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
: 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
Read/write endurance
: 1013 times / byte
Data retention
: 10 years ( + 85 °C)
Operating power supply voltage : 1.8 V to 3.6 V
Low power consumption
: Operating power supply current 170 μA (Typ @3.4 MHz)
Standby current 8 μA (Typ)
Sleep current 4 μA (Typ)
Operation ambient temperature range : − 40 °C to + 85 °C
Package
: 8-pin plastic SOP (FPT-8P-M09)
8-pin plastic SON (LCC-8P-M04)
RoHS compliant
• Bit configuration
• Two-wire serial interface
• Operating frequency
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Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED
2016.4
