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AO4606
AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel VDS= 30V P-Channel -30V ID= 6A (VGS=10V) -6.5A (VGS=-10V) RDS(ON) RDS(ON) < 30m (VGS=10V) < 28m (VGS=-10V) < 42m (VGS=4.5V) < 44m (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D2 Top View D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current ID TA=70° C p-channel Max p-channel -30 Units V ±20 ±20 V 6 VGS C TA=25° S1 -6.5 A 5 -5.3 IDM 30 -30 Avalanche Current C IAS, IAR 10 23 A Avalanche energy L=0.1mH C TA=25° C EAS, EAR 5 26 mJ Pulsed Drain Current Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 10: April 2012 2 Steady-State Steady-State 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 PD TA=70° C RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W ° C Max 62.5 90 40 Units ° C/W ° C/W ° C/W Page 1 of 9
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