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HN58V257AT12

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HN58V256A Series HN58V257A Series 256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A) REJ03C0147-0500Z (Previous ADE-203-357D (Z) Rev.4.0) Rev. 5.00 Nov. 17. 2003 Description Renesas Technology's HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features • Single 3 V supply: 2.7 to 5.5 V • Access time: 120 ns max • Power dissipation:  Active: 20 mW/MHz, (typ)  Standby: 110 µW (max) • On-chip latches: address, data, CE, OE, WE • Automatic byte write: 10 ms max • Automatic page write (64 bytes): 10 ms max • Ready/Busy (only the HN58V257A series) • Data polling and Toggle bit • Data protection circuit on power on/off • Conforms to JEDEC byte-wide standard • Reliable CMOS with MNOS cell technology • 10 erase/write cycles (in page mode) 5 • 10 years data retention • Software data protection • Write protection by RES pin (only the HN58V257A series) • Industrial versions (Temperature range: −20 to 85°C and −40 to 85°C) are also available. • There are free also lead free products. Rev.5.00, Nov. 17.2003, page 1 of 22

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