This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3J142AG, MA3J142KG
Silicon epitaxial planar type
For switching circuits
■ Package
■ Features
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• Code
SMini3-F2
• Pin Name
MA3J142AG
1: Cathode
2: N.C.
3: Anode
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Rating
Forward current
mA
°C
−55 to +150
IFSM
mA
500
150
Non-repetitive peak forward
surge current *
mA
225
IFM
V
100
IF
Peak forward current
V
80
VRM
1: Anode
2: N.C.
3: Cathode
Unit
80
VR
Maximum peak reverse voltage
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• Allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
°C
■ Marking Symbol
MA3J142AG: MB
MA3J142KG: MI
■ Internal Connection
3
Junction temperature
Tj
Storage temperature
Tstg
Note) *: t = 1 s
1
A
3
2
1
K
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Max
Unit
1.2
V
100
nA
VR = 0 V, f = 1 MHz
2
pF
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 W
3
ns
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Parameter
Forward voltage
VF
Reverse voltage
VR
Reverse current
IR
Ct
an
Terminal capacitance
int
en
Reverse recovery time *
trr
Min
Typ
IF = 100 mA
IR = 100 µA
80
V
VR = 75 V
Ma
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: October 2007
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00077AED
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1