SUP40N25-60
Vishay Siliconix
N-Channel 250 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
250
RDS(on) ()
ID (A)
0.060 at VGS = 10 V
40
0.064 at VGS = 6 V
38.7
•
•
•
•
Qg (Typ)
95
TrenchFET® Power MOSFETS
175 °C Junction Temperature
New Low Thermal Resistance Package
Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
TO-220AB
• Industrial
D
G
G D S
S
Top View
Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
a
L = 0.1 mH
Repetitive Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25
°Cc
35
EAR
A
70
IAR
Avalanche Current
V
40
23
IDM
Pulsed Drain Current
Unit
61
mJ
b
PD
300
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Operating Junction and Storage Temperature Range
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.5
°C/W
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000