HOME＞在庫検索＞在庫情報
SUP40N25-60-E3
SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET® Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT APPLICATIONS TO-220AB • Industrial D G G D S S Top View Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID a L = 0.1 mH Repetitive Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc 35 EAR A 70 IAR Avalanche Current V 40 23 IDM Pulsed Drain Current Unit 61 mJ b PD 300 3.75 W TJ, Tstg - 55 to 175 °C Symbol Operating Junction and Storage Temperature Range Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.5 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 73132 S11-2130 Rev. B, 31-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
