HOME＞在庫検索＞在庫情報
2SK2978ZYTL-E
2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.09Ω typ. (VGS = 4 V, I D = 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 2 1 D 4 G 1. Gate 2. Drain 3. Source 4. Drain S
宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。
