HOME＞在庫検索＞在庫情報
RN4987FETE85L,F
RN4987FE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C R1 R1 R2 B R2 B C JEDEC E JEITA E ― ― R1: 10 kΩ TOSHIBA R2: 47 kΩ Weight: 0.003 g (typ.) 2-2N1G (Q1, Q2 common) Marking Equivalent Circuit (top view) 6 6H 5 Q2 Q1 1 1 4 2 3 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
弊社からの見積回答メールの返信又はFAXにてお願いします。
