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MP4502
MP4502 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors inOne) MP4502 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • Unit: mm High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25°C) • High collector current: IC (DC) = 3 A (max) • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V IC 3 ICP 6 IB PC DC Collector current Pulse Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Tc = 25°C Isolation voltage ― JEITA ― 0.5 A TOSHIBA 3.0 Ta = 25°C JEDEC A W W 25 1000 V Tj 150 °C Tstg Storage temperature range Weight: 6.0 g (typ.) 5.0 PT VIsol Junction temperature 2-32B1B −55 to 150 °C Array Configuration 2 4 8 5 1 R1 R2 3 R1 ≈ 4.5 kΩ 9 6 11 12 7 10 R2 ≈ 300 Ω 1 2004-07-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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