FS30ASJ-2
High-Speed Switching Use
Nch Power MOS FET
REJ03G1412-0300
Rev.3.00
Dec 19, 2008
Features
•
•
•
•
•
Drive voltage : 4 V
VDSS : 100 V
rDS(ON) (max) : 84 mΩ
ID : 30 A
Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
2, 4
1.
2.
3.
4.
1
12
3
Gate
Drain
Source
Drain
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Ratings
100
±20
30
120
30
30
120
35
– 55 to +150
– 55 to +150
Unit
V
V
A
A
A
A
A
W
°C
°C
—
0.32
g
REJ03G1412-0300 Rev.3.00 Dec 19, 2008
Page 1 of 6
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
