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2SC3691M
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A Base Current-Continuous 2.5 A Collector Power Dissipation @ TC=25℃ 25 IB B PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website:www.iscsemi.cn 2 150 ℃ -55~150 ℃
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