5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED)
SILICON EPITAXIAL TYPE
5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A
Unit: mm
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 200 V, 300 V, 400V
Average Output Rectified Current
: IO = 5 A
Ultra Fast Reverse-Recovery Time
: trr = 35 ns (Max)
Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
5DL2CZ47A
Repetitive Peak
Reverse Voltage
5FL2CZ47A
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
UNIT
200
VRRM
5GL2CZ47A
Average Output Rectified Current
RATING
V
300
400
IO
IFSM
5
A
25 (50Hz)
27.5 (60Hz)
A
Tj
°C
−40~150
°C
―
Screw Torque
−40~150
Tstg
Storage Temperature Range
0.6
N·m
JEDEC
JEITA
TOSHIBA
Weight: 2.0 g
―
―
12−10C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
5FL2CZ47A
IFM = 2.5A
5GL2CZ47A
Repetitive Peak
Reverse Current
(Note 1)
5DL2CZ47A
5FL2CZ47A
0.98
―
1.3
―
VFM
MAX
―
5DL2CZ47A
Peak Forward
Voltage
(Note 1)
TYP.
UNIT
1.8
V
―
10
VRRM = Rated
―
10
―
IRRM
50
―
35
ns
5GL2CZ47A
μA
Reverse Recovery Time
(Note 1)
trr
IF = 2A, di / dt = −20A / μs
Forward Recovery Time
(Note 1)
tfr
IF = 1A
―
100
ns
Total DC, Junction to Case
―
3.8
°C / W
Thermal Resistance
Rth (j−c)
Note 1: A value applied to one cell.
POLARITY
1
2006-11-08
