TPC8109
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8109
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 19 S (typ.)
•
Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
•
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
JEDEC
―
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
JEITA
―
Gate-source voltage
VGSS
±20
V
TOSHIBA
A
Weight: 0.080 g (typ.)
DC
(Note 1)
ID
−10
Pulse
(Note 1)
IDP
−40
PD
1.9
W
PD
1.0
W
EAS
130
mJ
IAR
−10
A
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
2-6J1B
°C
Drain current
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
