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IR2301S
Data Sheet No. PD60201 Rev.D IR2301(S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 5 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Outputs in phase with inputs Also available LEAD-FREE (PbF) Description 8 Lead PDIP IR2301 8 Lead SOIC IR2301S 2106/2301//2108//2109/2302/2304 Feature Comparison The IR2301(S) are high voltage, high speed CrossInput conduction power MOSFET and IGBT drivers with indepenDead-Time Ground Pins Part prevention logic dent high and low side referenced output logic 2106/2301 channels. Proprietary HVIC and latch immune COM HIN/LIN no none 21064 VSS/COM CMOS technologies enable ruggedized mono2108 Internal 540ns COM HIN/LIN yes lithic construction. The logic input is compatible Programmable 0.54~5 µs 21084 VSS/COM with standard CMOS or LSTTL output, down to 2109/2302 Internal 540ns COM IN/SD yes 3.3V logic. The output drivers feature a high Programmable 0.54~5 µs 21094 VSS/COM pulse current buffer stage designed for minimum yes Internal 100ns HIN/LIN COM 2304 driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V (Refer to Lead Assignments for correct pin configuration). This/ T h e s e diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. VCC VCC VB HIN HIN HO LIN LIN VS COM LO TO LOAD IR2301 www.irf.com 1
INFINEON
Infineon Technologies
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