DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
(in millimeters)
designed for high voltage switching applications.
FEATURES
1.0
1
Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS
450/500
V
Gate to Source Voltage
VGSS
±30
ID(DC)
±25
A
Drain Current (pulse)*
ID(pulse)
±100
PT1
160
PT2
3.0
Tch
150
Tstg
–55 ~ +150
°C
Single Avalanche Current**
IAS
25
EAS
446
2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
A
Single Avalanche Energy**
0.6 ± 0.1
°C
Storage Temperature
5.45
W
Channel Temperature
1.0 ± 0.2
2.2 ± 0.2
5.45
W
Total Power Dissipation (Ta = 25 °C)
3
A
Total Power Dissipation (TC = 25 °C)
2
V
Drain Current (DC)
7.0
6.0
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)
4.5 ± 0.2
20.0 ± 0.2
4
19 MIN.
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
4.7 MAX.
1.5
3.2 ± 0.2
3.0 ± 0.2
• Low On-Resistance
• Low Ciss
15.7 MAX.
mJ
MP-88
Drain
Body
Diode
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
Gate
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
Source
exceeding the rated voltage may be applied to this device.
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
©
1995
