HOME＞在庫検索＞在庫情報
M29DW323DT70N6E
M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program MEMORY BLOCKS – Dual Bank Memory Array: 8Mbit+24Mbit – Parameter Blocks (Top or Bottom Location) DUAL OPERATIONS – Read in one bank while Program or Erase in other ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming VPP/WP PIN for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29DW323DT: 225Eh – Bottom Device Code M29DW323DB: 225Fh March 2005 Figure 1. Packages TSOP48 (N) 12 x 20mm FBGA TFBGA48 (ZE) 6 x 8mm 1/50
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
