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2SJ533
2SJ533 Silicon P Channel MOS FET High Speed Power Switching ADE-208-649B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source
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