PD - 97313
IRFR3806PbF
IRFU3806PbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
D
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
S
VDSS
RDS(on) typ.
max.
ID
60V
12.6mΩ
15.8mΩ
43A
D
S
S
D
G
G
D-Pak
I-Pak
IRFR3806PbF IRFU3806PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
43
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
31
IDM
Pulsed Drain Current c
170
PD @TC = 25°C
Maximum Power Dissipation
Units
A
71
W
Linear Derating Factor
0.47
VGS
Gate-to-Source Voltage
± 20
W/°C
V
dv/dt
TJ
Peak Diode Recovery e
24
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
V/ns
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy d
73
mJ
IAR
Avalanche Current c
25
A
EAR
Repetitive Avalanche Energy f
7.1
mJ
Thermal Resistance
Typ.
Max.
RθJC
Symbol
Junction-to-Case j
–––
2.12
RθCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RθJA
Junction-to-Ambient ij
–––
62
www.irf.com
Parameter
Units
°C/W
1
03/04/08