128Mb: 3V Embedded Parallel NOR Flash
Features
Micron Parallel NOR Flash Embedded
Memory
M29DW128G
Features
• Common flash interface
– 64-bit security code
• 100,000 program/erase cycles per block
• Low power consumption
– Standby and automatic standby
• Hardware block protection
– VPP/WP# pin for fast program and write protect
of the four outermost parameter blocks
• Security features
– Volatile protection
– Nonvolatile protection
– Password protection
– Additional block protection
• Extra block (128-word factory locked and 128-word
customer lockable) for security block or additional
information storage
– 128-word (256-byte) memory block for permanent, secure identification
• Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2202h
• RoHS-compliant packages
– TSOP56 (NF) 14mm x 20mm
– TBGA64 (ZA) 10mm x 13mm
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
– VPPH = 9V for fast program (optional)
• Asynchronous random/page read
– Page size: 8words
– Page access: 25ns
– Random access: 60ns, 70ns, 80ns
• Enhanced buffered program commands: 256-word
• Program time
– 15µs per byte/word TYP
– 32-word write buffer
– Chip program time: 5s with V PPH and 8s without
VPPH
• Erase verify
• Memory organization
– Quadruple bank memory array: 16Mb + 48Mb +
48Mb + 16Mb
– Parameter blocks (top and bottom)
• Dual operation (while program or erase in one
bank, read from any other bank)
• Program/erase suspend and resume modes
– Read from any block during program suspend
– Read and program another block during erase
suspend
• Unlock bypass, block erase, chip erase, write to buffer, enhanced buffered program commands
– Fast buffered/batch programming
– Fast block/chip erase
PDF: 09005aef8507150c
m29dw_128g.pdf - Rev. B 02/16 EN
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© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
