PD - 97036B
IRFI4227PbF
PDP SWITCH
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
200
V
VDS (Avalanche) typ.
240
RDS(ON) typ. @ 10V
21
V
m:
IRP max @ TC= 100°C
47
A
TJ max
150
°C
D
D
G
G
S
D
S
TO-220AB Full-Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGS
Gate-to-Source Voltage
±30
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
26
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
17
IDM
Pulsed Drain Current
100
c
g
47
IRP @ TC = 100°C
Repetitive Peak Current
PD @TC = 25°C
Power Dissipation
46
PD @TC = 100°C
Power Dissipation
18
W
Linear Derating Factor
0.37
W/°C
TJ
Operating Junction and
-40 to + 150
°C
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
300
x
10lb in (1.1N m)
N
Thermal Resistance
Parameter
RθJC
RθJA
f
Junction-to-Case
Junction-to-Ambient
f
Typ.
Max.
–––
–––
Units
2.73
65
Notes through
are on page 8
www.irf.com
1
09/14/07