This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA2B150 (MA150), MA2B162 (MA162)
Silicon epitaxial planar type
For switching circuits
Unit: mm
■ Features
M
Di ain
sc te
on na
tin nc
ue e/
d
• Short reverse recovery time trr
• Small terminal capacitance Ct
Symbol
Rating
Unit
VR
35
V
MA2B150
MA2B162
Repetitive peak
reverse voltage
MA2B150
24 min.
24 min.
4.0±0.5
φ 1.78±0.15
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Parameter
Reverse voltage
φ 0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
75
VRRM
35
MA2B162
V
Cathode
Anode
75
Forward current (Average)
IF(AV)
Repetitive peak forward current
IFRM
Non-repetitive peak forward
surge current *
IFSM
Storage temperature
Note) *: t = 1 s
mA
°C
−55 to +200
Tstg
mA
500
Tj
mA
225
200
Junction temperature
100
°C
1: Cathode
2: Anode
DO-35-A1 Package
EIAJ: SC-40
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Forward voltage
Symbol
MA2B150
VF
MA2B162
MA2B150
VR
Reverse current
MA2B150
IR1
ce
/D
isc
on
tin
ue
Reverse voltage
MA2B162
MA2B150
IR2
MA2B162
an
MA2B150
IR3
en
int
Ma
Reverse recovery
time *
Ct
MA2B162
MA2B150
MA2B162
Min
IR = 5 µA
Typ
Max
0.95
Unit
1.2
V
1.20
35
V
VR = 15 V
VR = 20 V
25
12
100
5
50
µA
100
VR = 75 V
VR = 35 V, Ta = 150°C
nA
µA
100
VR = 0 V, f = 1 MHz
2
0.9
trr
nA
25
VR = 30 V
VR = 75 V, Ta = 150°C
MA2B162
Terminal capacitance MA2B150
Conditions
IF = 100 mA
2.0
2.2
pF
4.0
IF = 10 mA, VR = 1 V,
10
Irr = 0.1 IR, RL = 100 Ω
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz (MA2B150), 250MHz (MA2B162).
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
3. *: trr measurement circuit
tp
tr
10%
A
■ Cathode Indication
Type No.
Color
VR
MA2B150 MA2B162
White
Violet
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 1 V
RL = 100 Ω
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKF00001BED
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