PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1B-C/B-L, K6R4016V1B-I/B-P
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
History
Draft Data
Remark
Rev. 0.0
Initial release with Design Target.
Jan. 1st, 1997
Design Target
Rev. 1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Preliminary
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item
Previous
ICC
10ns
240mA
12ns
230mA
15ns
220mA
ISB
f=max.
40mA
ISB1
f=0
10 / 1mA
IDR
VDR=3.0V
0.9mA
Feb.11th.1998
Final
Jun. 27th 1998
Final
Rev. 2.1
Current
250mA
245mA
240mA
50mA
10 / 1.2mA
1.0mA
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
ICC
250/245/240mA
275/270/265mA
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.1
June 1998
