5Z27,5Z30
TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION
5Z27, 5Z30
POWER SURGE SUPPRESSOR
Unit: mm
- - - designed for use as a reverse power transient suppressor to protect
automotive electrical equipment from over−voltage conditions.
Excellent Clamp Voltage Characteristics
High Power Capability
Rapidly Surge Absorption
Excellent Surge Responsibility
Various Lead Types
Non−Standard Voltage Available
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Allowable Power Dissipation (Note 1)
P
5
W
Non-Repetitive Peak Reverse Surge
Current (Ta=25°C)
(Fig.1)
IRSM
62
A
Junction Temperature
Tj
−40~150
°C
Storage Temperature
Tstg
−40~150
°C
Note 1: Lead tip temperature
TL=25°C
JEDEC
⎯
Note 2: Using continuously under heavy loads (e.g. the application of
JEITA
⎯
high temperature/current/voltage and the significant change in
TOSHIBA
3-10B1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 2.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Fig.1
MARKING
Abbreviation Code
5Z27
5Z30
Lot No.
Part No.
5Z27
Part No. (or abbreviation code)
5Z30
5Z27
Cathode mark
1
2006-11-09
